Parametric results for: 1N957B TR under Zener Diodes
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1N957B
Microchip Technology Inc
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$3.4373 | No | Active | 18.5 mA | 417 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-204AA | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, DO-7, 2 PIN | compliant | Microchip | ||||||||||||||||
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1N957B-1
Microchip Technology Inc
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$3.4373 | No | Active | 18.5 mA | 150 µA | 400 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 4.5 Ω | 700 Ω | 5.2 V | 3.4 mV/°C | 5 % | O-LALF-W2 | e0 | DO-204AH | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | Microchip | ||||||||||
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1N957B-1/TR
Microchip Technology Inc
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$3.6365 | No | Active | 18.5 mA | 150 µA | 400 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 4.5 Ω | 700 Ω | 5.2 V | 3.4 mV/°C | 5 % | O-LALF-W2 | e0 | DO-204AH | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||
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1N957B-1E3
Microchip Technology Inc
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$3.6365 | Yes | Active | 18.5 mA | 150 µA | 400 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 4.5 Ω | 700 Ω | 5.2 V | 3.4 mV/°C | 5 % | O-LALF-W2 | e3 | DO-204AH | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||
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1N957B-1E3/TR
Microchip Technology Inc
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$3.8729 | Yes | Active | 1.1 V | 18.5 mA | 150 µA | 400 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 4.5 Ω | 700 Ω | 5.2 V | 3.4 mV/°C | 5 % | O-LALF-W2 | e3 | DO-204AH | 175 °C | -65 °C | 260 | 40 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-7, 2 PIN | compliant | Microchip | EAR99 | 8541.10.00.50 | |||||
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1N964D
New Jersey Semiconductor Products Inc
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Check for Price | Contact Manufacturer | 28 mA | 500 mW | 13 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | 1 | ZENER | 1 % | 175 °C | -65 °C | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | |||||||||||||||||||||||||||||||
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1N957BRL2
onsemi
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Check for Price | No | Transferred | 18.5 mA | 500 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 4.5 Ω | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-204AH | 200 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | ON SEMICONDUCTOR | HERMETIC SEALED, GLASS, DO-35, 2 PIN | not_compliant | EAR99 | 8541.10.00.50 | DO-35 | 2 | |||||||||||
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1N967
New Jersey Semiconductor Products Inc
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Check for Price | No | Active | 20 mA | 500 mW | 18 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | 1 | ZENER | 20 % | e0 | 175 °C | -65 °C | Tin/Lead (Sn/Pb) | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | ||||||||||||||||||||||||||||
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1N957BT50R
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | 18.5 mA | 500 mW | 6.8 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 4.5 Ω | 5 % | Not Qualified | O-PALF-W2 | DO-35 | 175 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | FAIRCHILD SEMICONDUCTOR CORP | GLASS PACKAGE-2 | compliant | EAR99 | 8541.10.00.50 | DO-35 | 2 | ||||||||||||||
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1N960B
New Jersey Semiconductor Products Inc
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Check for Price | No | Active | 35 mA | 500 mW | 9.1 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | 1 | ZENER | 5 % | e0 | 200 °C | -65 °C | Tin/Lead (Sn/Pb) | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown |