Parametric results for: 1mb08d120 under IGBTs

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW SATURATION VOLTAGE 1

1 hit Apply

Collector Current-Max (IC) (1)

13 A 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

1.2 kV 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

500 ns 1

1 hit Apply

Gate-Emitter Thr Voltage-Max (1)

8.5 V 1

1 hit Apply

20 V 1

1 hit Apply

R-PSFM-T3 1

1 hit Apply

Manufacturer (1)

Fuji Electric Co Ltd 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Obsolete 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

115 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply