Parametric results for: 1mbh50d-060 under IGBTs

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 5 HIGH RELIABILITY, LOW NOISE 1

6 hits Apply

Collector Current-Max (IC) (2)

75 A 3 82 A 3

Min (A) - Max (A)

6 hits Apply

Collector-Emitter Voltage-Max (1)

600 V 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

350 ns 1

6 hits Apply

Gate-Emitter Thr Voltage-Max (1)

8.5 V 1

6 hits Apply

20 V 1

6 hits Apply

R-PSFM-T3 6

6 hits Apply

Manufacturer (3)

Fuji Electric Co Ltd 2 FUJITSU Limited 2 FUJITSU Semiconductor Limited 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

FLANGE MOUNT 6

6 hits Apply

Obsolete 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

310 W 1

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply