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DFE252012PD-R47M=P2
Murata Manufacturing Co Ltd
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$0.0878 | Yes | Active | GENERAL PURPOSE INDUCTOR | 470 nH | 27 mΩ | 20 % | YES | 1 MHz | 4 A | METAL ALLOY | 1008 | POWER INDUCTOR | 1 | YES | AEC-Q200 | 125 °C | -40 °C | Rectangular | 2 | SMT | TR, EMBOSSED, 7 INCH | RECTANGULAR PACKAGE | DUAL ENDED | WRAPAROUND | 1.2 mm | 2.5 mm | 2 mm | MURATA MANUFACTURING CO LTD | CHIP | compliant | EAR99 | 8504.50.80.00 | Murata Electronics | |||||||
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BDCD002520122R2MS1
Pulse Electronics Corporation
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$0.1050 | Yes | Active | GENERAL PURPOSE INDUCTOR | 2.2 µH | 115 mΩ | 20 % | YES | 2 MHz | 2 A | 1008 | POWER INDUCTOR | 1 | YES | 125 °C | -40 °C | Rectangular | 2 | SMT | TR, 7 Inch | RECTANGULAR PACKAGE | DUAL ENDED | WRAPAROUND | 1.2 mm | 2.5 mm | 2 mm | PULSE ELECTRONICS CORP | CHIP | compliant | ||||||||||||
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CM252016-100KL
Bourns Inc
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$0.1103 | Yes | Yes | Obsolete | GENERAL PURPOSE INDUCTOR | 10 µH | 3.5 Ω | 10 % | YES | 2.52 MHz | 80 mA | 32 MHz | FERRITE | 25 | 1008 | RF INDUCTOR | 1 | NO | e2 | 100 °C | -40 °C | Chip | 2 | SMT | TR | RECTANGULAR PACKAGE | Tin/Copper (Sn99.3Cu0.7) | DUAL ENDED | WRAPAROUND | 1.6 mm | 2.5 mm | 2 mm | BOURNS INC | 1008 | not_compliant | EAR99 | 8504.50.80.00 | Bourns | |||
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CIGW252010GL1R5MNE
Samsung Electro-Mechanics
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$0.1139 | Yes | Active | GENERAL PURPOSE INDUCTOR | 1.5 µH | 54 mΩ | 20 % | YES | 1 MHz | 3.2 A | METAL COMPOSITE | POWER INDUCTOR | 1 | NO | e3 | 125 °C | -40 °C | 2 | RECTANGULAR PACKAGE | TIN OVER NICKEL | DUAL ENDED | WRAPAROUND | SAMSUNG ELECTRO-MECHANICS | CHIP, 1008 | compliant | EAR99 | 8504.50.80.00 | ||||||||||||||
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CIGW252010GL2R2MNE
Samsung Electro-Mechanics
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$0.1139 | Yes | Active | GENERAL PURPOSE INDUCTOR | 2.2 µH | 93 mΩ | 20 % | YES | 1 MHz | 2.2 A | METAL COMPOSITE | POWER INDUCTOR | 1 | NO | 125 °C | -40 °C | 2 | RECTANGULAR PACKAGE | DUAL ENDED | WRAPAROUND | SAMSUNG ELECTRO-MECHANICS | compliant | EAR99 | 8504.50.80.00 | |||||||||||||||||
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CIGW252010GL3R3MNE
Samsung Electro-Mechanics
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$0.1139 | Yes | Active | GENERAL PURPOSE INDUCTOR | 3.3 µH | 112 mΩ | 20 % | YES | 1 MHz | 1.8 A | METAL COMPOSITE | POWER INDUCTOR | 1 | NO | 125 °C | -40 °C | 2 | RECTANGULAR PACKAGE | DUAL ENDED | WRAPAROUND | SAMSUNG ELECTRO-MECHANICS | CHIP, 1008 | compliant | EAR99 | 8504.50.80.00 | ||||||||||||||||
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CIGW252010GL1R0MNE
Samsung Electro-Mechanics
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$0.1139 | Yes | Active | GENERAL PURPOSE INDUCTOR | 1 µH | 40 mΩ | 20 % | YES | 1 MHz | 3.3 A | METAL COMPOSITE | POWER INDUCTOR | 1 | NO | 125 °C | -40 °C | 2 | RECTANGULAR PACKAGE | DUAL ENDED | WRAPAROUND | SAMSUNG ELECTRO-MECHANICS | CHIP, 1008 | compliant | EAR99 | 8504.50.80.00 | ||||||||||||||||
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CIGW252010GLR47MNE
Samsung Electro-Mechanics
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$0.1139 | Yes | Active | GENERAL PURPOSE INDUCTOR | 470 nH | 20 mΩ | 20 % | YES | 1 MHz | 5.9 A | METAL COMPOSITE | POWER INDUCTOR | 1 | NO | e3 | 125 °C | -40 °C | 2 | RECTANGULAR PACKAGE | TIN OVER NICKEL | DUAL ENDED | WRAPAROUND | SAMSUNG ELECTRO-MECHANICS | CHIP, 1008 | compliant | EAR99 | 8504.50.80.00 | ||||||||||||||
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CIGW252010GL4R7MNE
Samsung Electro-Mechanics
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$0.1139 | Yes | Active | GENERAL PURPOSE INDUCTOR | 4.7 µH | 216 mΩ | 20 % | YES | 1 MHz | 1.4 A | METAL COMPOSITE | POWER INDUCTOR | 1 | NO | e3 | 125 °C | -40 °C | 2 | RECTANGULAR PACKAGE | TIN OVER NICKEL | DUAL ENDED | WRAPAROUND | SAMSUNG ELECTRO-MECHANICS | CHIP, 1008 | compliant | EAR99 | 8504.50.80.00 | ||||||||||||||
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CIGT252012LMR47MNE
Samsung Electro-Mechanics
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$0.1169 | Yes | Active | GENERAL PURPOSE INDUCTOR | 470 nH | 25 mΩ | 20 % | YES | 1 MHz | 4.3 A | METAL COMPOSITE | POWER INDUCTOR | 1 | NO | 125 °C | -40 °C | 2 | RECTANGULAR PACKAGE | DUAL ENDED | WRAPAROUND | SAMSUNG ELECTRO-MECHANICS | CHIP, 1008 | compliant | EAR99 | 8504.50.80.00 |