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Manufacturer Part Number: 28l
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28L0138-40R-10
 Laird, A DuPont Business 		$0.0646 Yes Yes Active 1 e3 2 Matte Tin (Sn) - with Nickel (Ni) barrier LAIRD TECHNOLOGIES INC ROHS COMPLIANT PACKAGE-2 compliant EAR99 8504.50.80.00 10 mΩ 3.51 mm FERRITE BEAD 8.89 mm THROUGH HOLE MOUNT 135 OHM Ω 5 A
28L0138-10R-10
 Laird, A DuPont Business 		$0.0853 Yes Yes Active 1 e3 2 Matte Tin (Sn) - with Nickel (Ni) barrier LAIRD TECHNOLOGIES INC ROHS COMPLIANT PACKAGE-2 unknown EAR99 8504.50.80.00 10 mΩ 3.51 mm FERRITE BEAD 4.45 mm THROUGH HOLE MOUNT 75 OHM Ω 5 A
CAT28LV64T13A-25
 Catalyst Semiconductor 		$0.9824 No Transferred 65.536 kbit 8 8KX8 3.3 V 250 ns EEPROM NO YES 100000 Write/Erase Cycles 1 8000 8.192 k ASYNCHRONOUS 32 words PARALLEL 3 V 100 µA 8 µA 3.6 V 3 V CMOS INDUSTRIAL YES 5 ms R-PDSO-G28 Not Qualified e0 2 105 °C -40 °C 28 PLASTIC/EPOXY TSOP1 TSSOP28,.53,22 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 550 µm DUAL 1.2 mm 11.8 mm 8 mm CATALYST SEMICONDUCTOR INC TSOP1, TSSOP28,.53,22 unknown EAR99 8542.32.00.51 TSOP 28
CAT28LV64N-25T
 Catalyst Semiconductor 		$0.9824 No Transferred 65.536 kbit 8 8KX8 3.3 V 250 ns EEPROM 100000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION NO YES 100 100000 Write/Erase Cycles 1 8000 8.192 k ASYNCHRONOUS 32 words PARALLEL 3 V 100 µA 8 µA 3.6 V 3 V CMOS COMMERCIAL YES 5 ms R-PQCC-J32 Not Qualified e0 3 70 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm CATALYST SEMICONDUCTOR INC QCCJ, LDCC32,.5X.6 unknown EAR99 8542.32.00.51 QFJ 32
CAT28LV65J-25
 Catalyst Semiconductor 		$0.9824 No Transferred 65.536 kbit 8 8KX8 3.3 V 250 ns EEPROM NO YES 100000 Write/Erase Cycles 1 8000 8.192 k ASYNCHRONOUS 32 words PARALLEL 3 V YES 100 µA 8 µA 3.6 V 3 V CMOS COMMERCIAL YES 5 ms R-PDSO-G28 Not Qualified e0 1 70 °C 28 PLASTIC/EPOXY SOP SOP28,.4 RECTANGULAR SMALL OUTLINE YES TIN LEAD GULL WING 1.27 mm DUAL 2.65 mm 17.9 mm 7.5 mm CATALYST SEMICONDUCTOR INC SOP, SOP28,.4 unknown EAR99 8542.32.00.51 SOIC 28
CAT28LV65J-15
 Catalyst Semiconductor 		$0.9824 No Transferred 65.536 kbit 8 8KX8 3.3 V 150 ns EEPROM NO YES 100000 Write/Erase Cycles 1 8000 8.192 k ASYNCHRONOUS 32 words PARALLEL 3 V YES 100 µA 8 µA 3.6 V 3 V CMOS COMMERCIAL YES 5 ms R-PDSO-G28 Not Qualified e0 1 70 °C 28 PLASTIC/EPOXY SOP SOP28,.4 RECTANGULAR SMALL OUTLINE YES TIN LEAD GULL WING 1.27 mm DUAL 2.65 mm 17.9 mm 7.5 mm CATALYST SEMICONDUCTOR INC SOP, SOP28,.4 unknown EAR99 8542.32.00.51 SOIC 28
CAT28LV65P-15
 Catalyst Semiconductor 		$0.9824 No Transferred 65.536 kbit 8 8KX8 3.3 V 150 ns EEPROM NO YES 100000 Write/Erase Cycles 1 8000 8.192 k ASYNCHRONOUS 32 words PARALLEL 3 V YES 100 µA 8 µA 3.6 V 3 V CMOS COMMERCIAL YES 5 ms R-PDIP-T28 Not Qualified e0 70 °C 28 PLASTIC/EPOXY DIP DIP28,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 36.695 mm 15.24 mm CATALYST SEMICONDUCTOR INC DIP, DIP28,.6 unknown EAR99 8542.32.00.51 DIP 28
CAT28LV64NI-25
 Catalyst Semiconductor 		$1.0839 No Transferred 65.536 kbit 8 8KX8 3.3 V 250 ns EEPROM NO YES 100000 Write/Erase Cycles 1 8000 8.192 k ASYNCHRONOUS 32 words PARALLEL 3 V 100 µA 8 µA 3.6 V 3 V CMOS INDUSTRIAL YES 5 ms R-PQCC-J32 Not Qualified e0 3 85 °C -40 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm CATALYST SEMICONDUCTOR INC QCCJ, LDCC32,.5X.6 unknown EAR99 8542.32.00.51 QFJ 32
CAT28LV256NI-30
 Catalyst Semiconductor 		$1.0839 No Transferred 262.144 kbit 8 32KX8 3.3 V 300 ns EEPROM NO YES 100000 Write/Erase Cycles 1 32000 32.768 k ASYNCHRONOUS 64 words PARALLEL 3 V 150 µA 15 µA 3.6 V 3 V CMOS INDUSTRIAL YES 10 ms R-PQCC-J32 Not Qualified e0 3 85 °C -40 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm CATALYST SEMICONDUCTOR INC QCCJ, LDCC32,.5X.6 unknown EAR99 8542.32.00.51 QFJ 32
CAT28LV65H13I-25
 Catalyst Semiconductor 		$1.1951 Yes Transferred 65.536 kbit 8 8KX8 3.3 V 250 ns EEPROM NO YES 100000 Write/Erase Cycles 1 8000 8.192 k ASYNCHRONOUS 32 words PARALLEL 3 V YES 100 µA 8 µA 3.6 V 3 V CMOS INDUSTRIAL YES 5 ms R-PDSO-G28 Not Qualified e3 2 85 °C -40 °C 28 PLASTIC/EPOXY TSOP1 TSSOP28,.53,22 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 550 µm DUAL 1.2 mm 11.8 mm 8 mm CATALYST SEMICONDUCTOR INC TSOP1, TSSOP28,.53,22 unknown EAR99 8542.32.00.51 TSOP 28
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