Parametric results for: 2N3419S, under Small Signal Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Fall Time-Max (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

COLLECTOR 27

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Collector Current-Max (IC) (1)

3 A 34

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150 pF 5

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Collector-Emitter Voltage-Max (1)

80 V 33

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Configuration (1)

SINGLE 34

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DC Current Gain-Min (hFE) (2)

10.0 33 20.0 1

Min - Max

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200 ns 5

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TO-205AD 11 TO-39 22

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O-MBCY-W3 33

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e0 22

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Manufacturer (8)

Cobham PLC 6 Cobham Semiconductor Solutions 6 MACOM 6 Microchip Technology Inc 4 Microsemi Corporation 6 New England Semiconductor 4 Silicon Transistor Corporation 4 VPT Components 5

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Number of Elements (1)

1 34

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Number of Terminals (1)

3 33

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200.0 °C 22

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-65.0 °C 8

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METAL 33

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ROUND 33

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CYLINDRICAL 33

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Active 9 Obsolete 5 Transferred 27

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No 7

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NOT SPECIFIED 14

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Polarity/Channel Type (1)

NPN 34

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1 W 5

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1 W 14 5 W 5

Min (W) - Max (W)

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Surface Mount (1)

NO 34

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