Parametric results for: 2N5589 under Other Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS 1

4 hits Apply

Collector Current-Max (IC) (1)

600 mA 4

4 hits Apply

30 pF 1

4 hits Apply

Collector-Emitter Voltage-Max (1)

18 V 1

4 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN RESISTOR 1

4 hits Apply

DC Current Gain-Min (hFE) (1)

5.0 4

4 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

4 hits Apply

O-XRPM-F4 1

4 hits Apply

e0 1

4 hits Apply

Manufacturer (4)

Advanced Semiconductor Inc 1 General Transistor Corp 1 Microsemi Corporation 1 STMicroelectronics 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

4 1

4 hits Apply

175.0 °C 3 200.0 °C 1

Min (°C) - Max (°C)

4 hits Apply

UNSPECIFIED 1

4 hits Apply

ROUND 1

4 hits Apply

POST/STUD MOUNT 1

4 hits Apply

Active 2 Contact Manufacturer 1 Obsolete 1

4 hits Apply

Polarity/Channel Type (1)

NPN 4

4 hits Apply

15 W 4

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply

Transition Frequency-Nom (fT) (1)

200 MHz 4

4 hits Apply