Parametric results for: 2N5660 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 31

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Collector Current-Max (IC) (2)

1 A 18 2 A 27

Min (A) - Max (A)

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45 pF 5

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Collector-Emitter Voltage-Max (2)

200 V 37 300 V 2

Min (V) - Max (V)

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Configuration (1)

SINGLE 45

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DC Current Gain-Min (hFE) (3)

5.0 8 10.0 4 40.0 29

Min - Max

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TO-213 4 TO-213AA 10 TO-66 21

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O-MBFM-P2 37

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e0 28 e1 2

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Manufacturer (19)

API Technologies Corp 1 Boca Semiconductor Inc 1 Defense Logistics Agency 3 General Transistor Corp 1 Inchange Semiconductor Company Ltd 1 Microchip Technology Inc 4 Microsemi Corporation 5 New England Semiconductor 4 New Jersey Semiconductor Products Inc 4 Semicoa Semiconductors 4 Semiconductor Technology Inc 1 Silicon Transistor Corporation 4 Solid State Devices Inc (SSDI) 1 Solitron Devices Inc 1 Square D by Schneider Electric 1 Transistor & Electronic Co 1 TT Electronics Power and Hybrid / Semelab Limited 2 TT Electronics Resistors 2 Unitrode Corporation 4

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Number of Elements (1)

1 45

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Number of Terminals (1)

2 37

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200.0 °C 33

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METAL 37

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ROUND 37

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FLANGE MOUNT 37

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Active 17 Contact Manufacturer 6 Obsolete 9 Transferred 13

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No 6 Yes 1

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NOT SPECIFIED 3

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Polarity/Channel Type (1)

NPN 45

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2 W 1 20 W 5 35 W 4

Min (W) - Max (W)

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20 W 31

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Surface Mount (1)

NO 43

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Transition Frequency-Nom (fT) (2)

20 MHz 34 60 MHz 1

Min (MHz) - Max (MHz)

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