Parametric results for: 2N5667S under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

COLLECTOR 14

31 hits Apply

Collector Current-Max (IC) (1)

5 A 30

31 hits Apply

120 pF 16

31 hits Apply

Collector-Emitter Voltage-Max (1)

300 V 30

31 hits Apply

Configuration (1)

SINGLE 30

31 hits Apply

DC Current Gain-Min (hFE) (2)

10.0 22 25.0 8

Min - Max

31 hits Apply

TO-205AD 17 TO-39 6 TO-5 4

31 hits Apply

O-MBCY-W3 27 O-MBFM-P2 4

31 hits Apply

e0 10

31 hits Apply

Manufacturer (6)

Defense Logistics Agency 4 Microchip Technology Inc 5 Microsemi Corporation 7 New England Semiconductor 5 Semicoa Semiconductors 4 VPT Components 6

31 hits Apply

Number of Elements (1)

1 30

31 hits Apply

Number of Terminals (2)

2 4 3 27

31 hits Apply

200.0 °C 17

31 hits Apply

-65.0 °C 16

31 hits Apply

METAL 31

31 hits Apply

ROUND 31

31 hits Apply

CYLINDRICAL 27 FLANGE MOUNT 4

31 hits Apply

Active 15 Obsolete 1 Transferred 15

31 hits Apply

No 5

31 hits Apply

Polarity/Channel Type (1)

NPN 30

31 hits Apply

1.2 W 16

31 hits Apply

1.2 W 10 15 W 6

Min (W) - Max (W)

31 hits Apply

Surface Mount (1)

NO 31

31 hits Apply