Parametric results for: 2N6083 under RF Power Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS 1

9 hits Apply

Collector Current-Max (IC) (2)

4 A 7 5 A 2

Min (A) - Max (A)

9 hits Apply

130 pF 3

9 hits Apply

Collector-Emitter Voltage-Max (1)

18 V 4

9 hits Apply

Configuration (3)

SINGLE 7 Single 1 SINGLE WITH BUILT-IN RESISTOR 1

9 hits Apply

DC Current Gain-Min (hFE) (1)

5.0 9

9 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 4

9 hits Apply

O-CRPM-F4 2 O-XRPM-F4 1

9 hits Apply

e0 1

9 hits Apply

Manufacturer (9)

Digitron Semiconductors 1 Freescale Semiconductor 1 Microsemi Corporation 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New Jersey Semiconductor Products Inc 1 Semitronics Corp 1 STMicroelectronics 1 Texas Instruments 1

9 hits Apply

Number of Elements (1)

1 8

9 hits Apply

Number of Terminals (1)

4 3

9 hits Apply

200.0 °C 8

9 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 UNSPECIFIED 1

9 hits Apply

ROUND 3

9 hits Apply

POST/STUD MOUNT 3

9 hits Apply

Active 1 Contact Manufacturer 1 Obsolete 7

9 hits Apply

No 1

9 hits Apply

Polarity/Channel Type (1)

NPN 9

9 hits Apply

65 W 8

9 hits Apply

Power Gain-Min (Gp) (1)

5.7 dB 2

9 hits Apply

Surface Mount (1)

NO 8

9 hits Apply

Transition Frequency-Nom (fT) (1)

200 MHz 2

9 hits Apply