Parametric results for: 2N6661JTXV02 under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE 2

2 hits Apply

DRAIN 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

90 V 2

2 hits Apply

Drain Current-Max (ID) (1)

860 mA 2

2 hits Apply

Drain-source On Resistance-Max (1)

4 Ω 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

10 pF 2

2 hits Apply

TO-205AD 2

2 hits Apply

O-MBCY-W3 2

2 hits Apply

Manufacturer (2)

Vishay Intertechnologies 1 Vishay Siliconix 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

METAL 2

2 hits Apply

ROUND 2

2 hits Apply

CYLINDRICAL 2

2 hits Apply

Obsolete 2

2 hits Apply

No 1

2 hits Apply

NOT SPECIFIED 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

6.25 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply