Parametric results for: 2N6849-JQR-AR1 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Surface Mount

AVALANCHE ENERGY RATED 2

2 hits Apply

500.0 mJ 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

2 hits Apply

Drain Current-Max (ID) (1)

6.5 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

300 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-205AF 2

2 hits Apply

O-MBCY-W3 2

2 hits Apply

e1 2

2 hits Apply

Manufacturer (2)

TT Electronics Power and Hybrid / Semelab Limited 1 TT Electronics Resistors 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

METAL 2

2 hits Apply

ROUND 2

2 hits Apply

CYLINDRICAL 2

2 hits Apply

Active 2

2 hits Apply

Yes 1

2 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply