Parametric results for: 2N6849-QR-B under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

AVALANCHE ENERGY RATED 4

4 hits Apply

500.0 mJ 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

4 hits Apply

Drain Current-Max (ID) (1)

6.5 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

300 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-205AF 4

4 hits Apply

O-MBCY-W3 4

4 hits Apply

e1 2

4 hits Apply

Manufacturer (2)

TT Electronics Power and Hybrid / Semelab Limited 2 TT Electronics Resistors 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

METAL 4

4 hits Apply

ROUND 4

4 hits Apply

CYLINDRICAL 4

4 hits Apply

Active 4

4 hits Apply

No 1 Yes 1

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply