Parametric results for: 2N6851TX under Power Field-Effect Transistors

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Manufacturer Part Number: 2n6851tx
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2N6851TXV
International Rectifier
Check for Price No No Obsolete P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 4 A 800 mΩ RADIATION HARDENED 500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 A SWITCHING SILICON TO-205AF O-MBCY-W3 e0 Not Qualified MILITARY STANDARD (USA) DRAIN METAL ROUND CYLINDRICAL TIN LEAD WIRE BOTTOM INTERNATIONAL RECTIFIER CORP CYLINDRICAL, O-MBCY-W3 compliant EAR99
2N6851TX
Intersil Corporation
Check for Price Transferred P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 4 A 800 mΩ RADIATION HARDENED 500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 20 A SWITCHING SILICON 160 ns 150 ns TO-205AF O-MBCY-W3 Not Qualified MILITARY STANDARD (USA) 150 °C DRAIN METAL ROUND CYLINDRICAL WIRE BOTTOM INTERSIL CORP unknown EAR99 8541.29.00.95
2N6851TX
International Rectifier
Check for Price No No Obsolete P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 4 A 800 mΩ RADIATION HARDENED 500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 A SWITCHING SILICON TO-205AF O-MBCY-W3 e0 Not Qualified MILITARY STANDARD (USA) DRAIN METAL ROUND CYLINDRICAL TIN LEAD WIRE BOTTOM INTERNATIONAL RECTIFIER CORP CYLINDRICAL, O-MBCY-W3 compliant EAR99
2N6851TXV
Intersil Corporation
Check for Price Transferred P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 4 A 800 mΩ RADIATION HARDENED 500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 A SWITCHING SILICON TO-205AF O-MBCY-W3 Not Qualified MILITARY STANDARD (USA) DRAIN METAL ROUND CYLINDRICAL WIRE BOTTOM INTERSIL CORP CYLINDRICAL, O-MBCY-W3 unknown EAR99
2N6851TX
Harris Semiconductor
Check for Price Transferred P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 4 A 800 mΩ RADIATION HARDENED 500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 20 A SWITCHING SILICON 160 ns 150 ns TO-205AF O-MBCY-W3 Not Qualified MILITARY STANDARD (USA) 150 °C DRAIN METAL ROUND CYLINDRICAL WIRE BOTTOM HARRIS SEMICONDUCTOR CYLINDRICAL, O-MBCY-W3 unknown EAR99 8541.29.00.95
2N6851TXV
Fairchild Semiconductor Corporation
Check for Price Transferred P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 4 A 800 mΩ RADIATION HARDENED 500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 A SWITCHING SILICON TO-205AF O-MBCY-W3 Not Qualified MILITARY STANDARD (USA) DRAIN METAL ROUND CYLINDRICAL WIRE BOTTOM FAIRCHILD SEMICONDUCTOR CORP CYLINDRICAL, O-MBCY-W3 unknown EAR99
2N6851TXV
Harris Semiconductor
Check for Price Transferred P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 4 A 800 mΩ RADIATION HARDENED 500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 20 A SWITCHING SILICON 160 ns 150 ns TO-205AF O-MBCY-W3 Not Qualified MILITARY STANDARD (USA) 150 °C DRAIN METAL ROUND CYLINDRICAL WIRE BOTTOM HARRIS SEMICONDUCTOR CYLINDRICAL, O-MBCY-W3 unknown EAR99 8541.29.00.95