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1 - 7 of 7 results
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2N6851TXV
International Rectifier
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Check for Price | No | No | Obsolete | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 4 A | 800 mΩ | RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | e0 | Not Qualified | MILITARY STANDARD (USA) | DRAIN | METAL | ROUND | CYLINDRICAL | TIN LEAD | WIRE | BOTTOM | INTERNATIONAL RECTIFIER CORP | CYLINDRICAL, O-MBCY-W3 | compliant | EAR99 | |||||||
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2N6851TX
Intersil Corporation
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Check for Price | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 4 A | 800 mΩ | RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 20 A | SWITCHING | SILICON | 160 ns | 150 ns | TO-205AF | O-MBCY-W3 | Not Qualified | MILITARY STANDARD (USA) | 150 °C | DRAIN | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | INTERSIL CORP | unknown | EAR99 | 8541.29.00.95 | |||||||
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2N6851TX
International Rectifier
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Check for Price | No | No | Obsolete | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 4 A | 800 mΩ | RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | e0 | Not Qualified | MILITARY STANDARD (USA) | DRAIN | METAL | ROUND | CYLINDRICAL | TIN LEAD | WIRE | BOTTOM | INTERNATIONAL RECTIFIER CORP | CYLINDRICAL, O-MBCY-W3 | compliant | EAR99 | |||||||
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2N6851TXV
Intersil Corporation
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Check for Price | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 4 A | 800 mΩ | RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | Not Qualified | MILITARY STANDARD (USA) | DRAIN | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | INTERSIL CORP | CYLINDRICAL, O-MBCY-W3 | unknown | EAR99 | |||||||||||
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2N6851TX
Harris Semiconductor
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Check for Price | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 4 A | 800 mΩ | RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 20 A | SWITCHING | SILICON | 160 ns | 150 ns | TO-205AF | O-MBCY-W3 | Not Qualified | MILITARY STANDARD (USA) | 150 °C | DRAIN | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | HARRIS SEMICONDUCTOR | CYLINDRICAL, O-MBCY-W3 | unknown | EAR99 | 8541.29.00.95 | ||||||
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2N6851TXV
Fairchild Semiconductor Corporation
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Check for Price | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 4 A | 800 mΩ | RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | Not Qualified | MILITARY STANDARD (USA) | DRAIN | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | FAIRCHILD SEMICONDUCTOR CORP | CYLINDRICAL, O-MBCY-W3 | unknown | EAR99 | |||||||||||
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2N6851TXV
Harris Semiconductor
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Check for Price | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 4 A | 800 mΩ | RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 20 A | SWITCHING | SILICON | 160 ns | 150 ns | TO-205AF | O-MBCY-W3 | Not Qualified | MILITARY STANDARD (USA) | 150 °C | DRAIN | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | HARRIS SEMICONDUCTOR | CYLINDRICAL, O-MBCY-W3 | unknown | EAR99 | 8541.29.00.95 |