Parametric results for: 2N7000-D26Z. under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

5 hits Apply

Drain Current-Max (ID) (1)

200 mA 4

5 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

5 pF 4

5 hits Apply

TO-92 4

5 hits Apply

O-PBCY-T3 4

5 hits Apply

e1 1 e3 2

5 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 2 onsemi 2 Texas Instruments 1

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 4

5 hits Apply

-55.0 °C 4

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

ROUND 4

5 hits Apply

CYLINDRICAL 4

5 hits Apply

Active 3 Obsolete 1 Transferred 1

5 hits Apply

Yes 3

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

400 mW 4

5 hits Apply

Surface Mount (1)

NO 4

5 hits Apply