Parametric results for: 2N7000T/R under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 1

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

60 V 5

5 hits Apply

Drain Current-Max (ID) (2)

200 mA 4 300 mA 1

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

5 pF 4 10 pF 1

Min (pF) - Max (pF)

5 hits Apply

TO-92 5

5 hits Apply

O-PBCY-T3 5

5 hits Apply

Manufacturer (2)

Calogic Inc 4 NXP Semiconductors 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 5

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

ROUND 5

5 hits Apply

CYLINDRICAL 5

5 hits Apply

Obsolete 5

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

400 mW 1

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply