Parametric results for: 2N7002 TR TIN/LEAD under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 7 CMOS COMPATIBLE 3 ESD PROTECTION, LOGIC LEVEL COMPATIBLE 2 FAST SWITCHING 1 HIGH INPUT IMPEDANCE 7 HIGH INPUT IMPEDENCE 1 HIGH RELIABILITY 21 HIGH RELIABILITY, LOW THRESHOLD 54 LOGIC LEVEL COMPATIBLE 71 LOW THRESHOLD 31 LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING 5 ULTRA LOW RESISTANCE 32 ULTRA-LOW RESISTANCE 30

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DRAIN 23 ISOLATED 3

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Configuration (6)

SEPARATE, 2 ELEMENTS 11 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 85 SINGLE 105 Single 4 SINGLE WITH BUILT-IN DIODE 440 SINGLE WITH BUILT-IN DIODE AND RESISTOR 13

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DS Breakdown Voltage-Min (2)

30 V 2 60 V 633

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (2)

115 mA 3 300 mA 1

Min (A) - Max (A)

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Drain Current-Max (ID) (31)

75 mA 3 115 mA 334 170 mA 3 180 mA 10 200 mA 11 210 mA 1 220 mA 1 230 mA 4 240 mA 8 247 mA 1 250 mA 18 260 mA 7 261 mA 2 280 mA 14 290 mA 2 292 mA 2 300 mA 123 310 mA 16 320 mA 19 330 mA 1 340 mA 52 350 mA 8 360 mA 7 380 mA 5 385 mA 5 400 mA 4 410 mA 1 450 mA 9 475 mA 6 800 mA 1 3 A 2

Min (A) - Max (A)

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Drain-source On Resistance-Max (27)

2.5 mΩ 4 7.5 mΩ 2 1.5 Ω 3 1.6 Ω 56 1.75 Ω 4 1.8 Ω 6 1.9 Ω 1 2 Ω 38 2.3 Ω 13 2.5 Ω 22 3 Ω 89 3.2 Ω 1 3.5 Ω 2 3.9 Ω 3 4 Ω 15 4.4 Ω 1 4.5 Ω 2 4.7 Ω 3 5 Ω 57 5.2 Ω 1 5.3 Ω 6 6 Ω 4 7 Ω 2 7.2 Ω 2 7.5 Ω 275 8 Ω 2 13.5 Ω 14

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 666

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0.7 pF 3 1.2 pF 2 1.3 pF 4 1.4 pF 2 2 pF 3 2.2 pF 1 2.5 pF 1 2.6 pF 1 2.7 pF 2 2.8 pF 2 3 pF 10 4 pF 10 4.2 pF 1 4.5 pF 1 5 pF 372 5.5 pF 1 6 pF 4 7 pF 14 7.5 pF 5 8 pF 3 10 pF 40

Min (pF) - Max (pF)

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TO-236 49 TO-236AA 3 TO-236AB 94 TO-92 6

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O-PBCY-T3 6 R-CDSO-N3 80 R-CDSO-N6 10 R-PBCC-N3 11 R-PDSO-F3 11 R-PDSO-F6 20 R-PDSO-G3 394 R-PDSO-G6 69 R-XBCC-N3 2 S-XUUC-N2 1 X-XUUC-N 1 X-XUUC-N3 1

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e0 60 e3 270 e4 14

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Manufacturer (76)

Advanced Power Electronics Corp 3 Bytesonic Corporation 1 Calogic Inc 8 Central Semiconductor Corp 12 CHENMKO Enterprise Co Ltd 33 Comchip Technology Corporation Ltd 15 Continental Device India Ltd 3 DC Components Co Ltd 1 Diodes Incorporated 73 Diotec Semiconductor AG 5 ELM Technology Corp 1 Exar Corporation 1 Fairchild Semiconductor Corporation 16 Formosa Microsemi Co Ltd 20 Freescale Semiconductor 4 Galaxy Microelectronics 18 Galaxy Semi-Conductor Co Ltd 3 HSMC Corporation 3 HY Electronic Corp 2 Infineon Technologies AG 9 InterFET Corporation 1 Jiangsu Changjiang Electronics Technology Co Ltd 11 KEC 10 Kodenshi Corporation 3 Kodenshi Sensing 3 Lision Technology Inc 2 Lite-On Semiconductor Corporation 11 LRC Leshan Radio Co Ltd 56 Micro Commercial Components 61 Microchip Technology Inc 3 Motorola Mobility LLC 4 Motorola Semiconductor Products 4 National Semiconductor Corporation 1 Nexperia 43 North American Philips Discrete Products Div 1 NTE Electronics Inc 1 NXP Semiconductors 50 onsemi 31 Panasonic Electronic Components 1 PanJit Semiconductor 79 Philips Semiconductors 6 Plessey Semiconductors Ltd 1 Promax-Johnton Electronic Corporation 1 Rectron Semiconductor 11 Rochester Electronics LLC 7 SamHop Microelectronics Corp. 1 Samsung Semiconductor 1 Secos Corporation 19 Silicon Standard Corp 1 Sipex Corporation 1 SPC Multicomp 1 STMicroelectronics 1 Supertex Inc 4 Suzhou Good-Ark Electronics Co Ltd 6 SY Sinyork Co Ltd 1 Taitron Components Inc 6 Taiwan Semiconductor 6 Tak Cheong Electronics (Holdings) Co Ltd 1 TDK Micronas GmbH 1 Telcom Semiconductor Inc 1 Teledyne Technologies Inc 1 Temic Semiconductors 4 Texas Instruments 4 Torex Semiconductor LTD 2 Toshiba America Electronic Components 7 Transys Electronics Limited 4 TT Electronics Power and Hybrid / Semelab Limited 45 TT Electronics Resistors 45 Unisonic Technologies Co Ltd 52 Vishay Intertechnologies 13 Vishay Semiconductors 1 Vishay Siliconix 16 WEITRON INTERNATIONAL CO., LTD. 10 YAGEO Corporation 3 Yangzhou Yangjie Electronics Co Ltd 16 Zetex / Diodes Inc 6

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1 267 3 2 NOT SPECIFIED 1

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Number of Elements (2)

1 558 2 96

Min - Max

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Number of Terminals (3)

2 1 3 505 6 99

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ENHANCEMENT MODE 647

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85.0 °C 1 150.0 °C 441

Min (°C) - Max (°C)

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-65.0 °C 30 -55.0 °C 172 -50.0 °C 4 -40.0 °C 1

Min (°C) - Max (°C)

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CERAMIC, METAL-SEALED COFIRED 90 PLASTIC/EPOXY 511 UNSPECIFIED 5

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RECTANGULAR 597 ROUND 6 SQUARE 1 UNSPECIFIED 2

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CHIP CARRIER 13 CYLINDRICAL 6 SMALL OUTLINE 585 UNCASED CHIP 3

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Active 546 Contact Manufacturer 62 Not Recommended 38 Obsolete 203 Transferred 64

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No 23 Yes 132

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235 2 240 6 260 239 NOT SPECIFIED 201

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Polarity/Channel Type (2)

N-CHANNEL 662 N-CHANNEL AND P-CHANNEL 1

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150 mW 4 200 mW 18 225 mW 8 250 mW 1 300 mW 2 350 mW 17 357 mW 1 500 mW 1

Min (W) - Max (W)

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150 mW 18 200 mW 74 225 mW 19 250 mW 6 275 mW 2 300 mW 27 310 mW 1 320 mW 2 330 mW 4 350 mW 53 357 mW 1 360 mW 1 370 mW 1 380 mW 2 400 mW 5 420 mW 5 450 mW 2 500 mW 6 540 mW 10 700 mW 2 715 mW 1 770 mW 1 830 mW 19 880 mW 1 990 mW 1 1 W 7 1.1 W 1 1.14 W 3 1.33 W 1 1.67 W 1 2.7 W 1 350 W 2

Min (W) - Max (W)

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Surface Mount (2)

NO 7 YES 659

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