Parametric results for: 2N7002-H under Small Signal Field-Effect Transistors
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2N7002H6327XTSA2
Infineon Technologies AG
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$0.0557 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 3 Ω | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 3 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-G3 | 3 | compliant | EAR99 | Infineon | |||||||
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2N7002H-7
Diodes Incorporated
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$0.0746 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 170 mA | 7.5 Ω | HIGH RELIABILITY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | compliant | EAR99 | ||||||||||||
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2N7002-HF
Comchip Technology Corporation Ltd
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$0.1473 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 250 mA | 3 Ω | 1.2 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | 350 mW | SILICON | R-PDSO-G3 | 150 °C | -55 °C | 260 | 10 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | COMCHIP TECHNOLOGY CO LTD | , | compliant | EAR99 | Comchip Technology | ||||||||||||
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2N7002HW
Galaxy Microelectronics
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Check for Price | Active | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||
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2N7002H-HF
Comchip Technology Corporation Ltd
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Check for Price | Active | NOT SPECIFIED | NOT SPECIFIED | COMCHIP TECHNOLOGY CO LTD | , | compliant | EAR99 | 2018-10-18 | |||||||||||||||||||||||||||||||||||
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2N7002H
Galaxy Microelectronics
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Check for Price | Active | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||
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2N7002H6327
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 3 Ω | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 3 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 500 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC PACKAGE-3 | 3 | compliant | EAR99 | Infineon | ||||||||||
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2N7002H-13
Diodes Incorporated
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 170 mA | 7.5 Ω | HIGH RELIABILITY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | compliant | EAR99 | ||||||||||||
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2N7002HWG
Galaxy Microelectronics
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Check for Price | Active | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | , | unknown | |||||||||||||||||||||||||||||||||||||||
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A2N7002HW-HF
Comchip Technology Corporation Ltd
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 2.5 mΩ | 4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 mW | 250 mW | SWITCHING | SILICON | R-PDSO-G3 | AEC-Q101 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | COMCHIP TECHNOLOGY CO LTD | SOT-323, 3 PIN | compliant | EAR99 | Comchip Technology | 2020-01-20 |