Parametric results for: 2N7500 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

RADIATION HARDENED 3

3 hits Apply

56.0 mJ 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

130 V 3

3 hits Apply

Drain Current-Max (ID) (1)

9 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

130 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

S-CBCC-N15 3

3 hits Apply

e0 3

3 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

15 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

SQUARE 3

3 hits Apply

CHIP CARRIER 3

3 hits Apply

Active 2 Transferred 1

3 hits Apply

No 1

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

25 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply