Parametric results for: 2SA1932 under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

1 A 1

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Collector-Emitter Voltage-Max (1)

230 V 1

1 hit Apply

Configuration (1)

SINGLE 1

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DC Current Gain-Min (hFE) (1)

100.0 1

1 hit Apply

R-PSIP-T3 1

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Manufacturer (1)

Toshiba America Electronic Components 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

3 1

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150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

IN-LINE 1

1 hit Apply

Obsolete 1

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No 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

PNP 1

1 hit Apply

1.8 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply

Transition Frequency-Nom (fT) (1)

70 MHz 1

1 hit Apply