Parametric results for: 2SA2013-TD-E under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

4 A 1

2 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 1

2 hits Apply

Configuration (1)

SINGLE 1

2 hits Apply

DC Current Gain-Min (hFE) (1)

200.0 1

2 hits Apply

TO-243AA 1

2 hits Apply

R-PDSO-F3 1

2 hits Apply

e6 1

2 hits Apply

Manufacturer (2)

onsemi 1 SANYO Semiconductor Co Ltd 1

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

3 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

260 1

2 hits Apply

Polarity/Channel Type (1)

PNP 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply

Transition Frequency-Nom (fT) (1)

360 MHz 1

2 hits Apply