Parametric results for: 2SB1127 under Power Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

LOW NOISE 14

30 hits Apply

Collector Current-Max (IC) (1)

5 A 30

30 hits Apply

Collector-Emitter Voltage-Max (1)

20 V 26

30 hits Apply

Configuration (1)

SINGLE 30

30 hits Apply

DC Current Gain-Min (hFE) (4)

60.0 2 100.0 18 140.0 5 200.0 5

Min - Max

30 hits Apply

TO-126 26

30 hits Apply

R-PSFM-T3 26

30 hits Apply

Manufacturer (3)

onsemi 4 SANYO Electric Co Ltd 13 SANYO Semiconductor Co Ltd 13

30 hits Apply

Number of Elements (1)

1 30

30 hits Apply

Number of Terminals (1)

3 26

30 hits Apply

140.0 °C 4 150.0 °C 11

Min (°C) - Max (°C)

30 hits Apply

PLASTIC/EPOXY 26

30 hits Apply

RECTANGULAR 26

30 hits Apply

FLANGE MOUNT 26

30 hits Apply

Active 4 Obsolete 13 Transferred 13

30 hits Apply

Polarity/Channel Type (1)

PNP 30

30 hits Apply

10 W 7

30 hits Apply

10 W 11

30 hits Apply

Surface Mount (1)

NO 30

30 hits Apply

Transition Frequency-Nom (fT) (1)

320 MHz 18

30 hits Apply