Parametric results for: 2SB1161 under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

12 A 4

4 hits Apply

420 pF 4

4 hits Apply

Collector-Emitter Voltage-Max (1)

160 V 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DC Current Gain-Min (hFE) (4)

20.0 1 60.0 1 80.0 1 100.0 1

Min - Max

4 hits Apply

R-PSFM-T3 4

4 hits Apply

Manufacturer (1)

Inchange Semiconductor Company Ltd 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Contact Manufacturer 4

4 hits Apply

Polarity/Channel Type (1)

PNP 4

4 hits Apply

3 W 4

4 hits Apply

120 W 4

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply

Transition Frequency-Nom (fT) (1)

20 MHz 4

4 hits Apply