Parametric results for: 2SB1232 under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Collector Current-Max (IC) (1)

40 A 43

43 hits Apply

Collector-Emitter Voltage-Max (1)

100 V 40

43 hits Apply

Configuration (1)

SINGLE 43

43 hits Apply

DC Current Gain-Min (hFE) (3)

20.0 2 50.0 26 70.0 15

Min - Max

43 hits Apply

TO-218 36

43 hits Apply

R-PSFM-T3 40

43 hits Apply

Manufacturer (3)

onsemi 3 SANYO Electric Co Ltd 20 SANYO Semiconductor Co Ltd 20

43 hits Apply

Number of Elements (1)

1 43

43 hits Apply

Number of Terminals (1)

3 40

43 hits Apply

150.0 °C 10

43 hits Apply

PLASTIC/EPOXY 40

43 hits Apply

RECTANGULAR 40

43 hits Apply

FLANGE MOUNT 40

43 hits Apply

Active 3 Obsolete 20 Transferred 20

43 hits Apply

Polarity/Channel Type (1)

PNP 43

43 hits Apply

150 W 18

43 hits Apply

150 W 8

43 hits Apply

Surface Mount (1)

NO 43

43 hits Apply