Parametric results for: 2SB1352 under Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTOR RATIO IS 0.05 1 BUILT-IN BIAS RESISTOR RATIO IS 0.05 1

2 hits Apply

ISOLATED 2

2 hits Apply

Collector Current-Max (IC) (1)

12 A 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

60 V 2

2 hits Apply

Configuration (1)

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

2000.0 2

2 hits Apply

R-PSFM-T3 2

2 hits Apply

e0 2

2 hits Apply

Manufacturer (2)

Allegro MicroSystems LLC 1 Sanken Electric Co Ltd 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

PNP 2

2 hits Apply

60 W 1

2 hits Apply

60 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply

Transition Frequency-Nom (fT) (1)

130 MHz 2

2 hits Apply