Parametric results for: 2SD1970 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ISOLATED 2

2 hits Apply

Collector Current-Max (IC) (1)

2 A 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

24 V 2

2 hits Apply

Configuration (1)

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

2000.0 2

2 hits Apply

R-PSFM-T3 2

2 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Transferred 2

2 hits Apply

Polarity/Channel Type (1)

NPN 2

2 hits Apply

10 W 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply