Parametric results for: 2SD235306 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

ISOLATED 1

1 hit Apply

Collector Current-Max (IC) (1)

3 A 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

60 V 1

1 hit Apply

Configuration (1)

SINGLE 1

1 hit Apply

DC Current Gain-Min (hFE) (1)

350.0 1

1 hit Apply

R-PSFM-T3 1

1 hit Apply

Manufacturer (1)

Toshiba America Electronic Components 1

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Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Obsolete 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

NPN 1

1 hit Apply

25 W 1

1 hit Apply

2 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply

Transition Frequency-Nom (fT) (1)

18 MHz 1

1 hit Apply