Parametric results for: 2SH13 under IGBTs

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Emitter Current-Max Fall Time-Max (tf) Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max Inter-base Voltage-Max JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Point Current-Max Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Collector Current-Max (IC) (1)

20 A 2

3 hits Apply

Collector-Emitter Voltage-Max (1)

600 V 2

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

50 mA 1

3 hits Apply

600 ns 2

3 hits Apply

Gate-Emitter Thr Voltage-Max (1)

5 V 2

3 hits Apply

20 V 2

3 hits Apply

55 V 1

3 hits Apply

TO-220AB 2

3 hits Apply

R-PSFM-T3 2

3 hits Apply

e0 1

3 hits Apply

Manufacturer (3)

Hitachi Ltd 1 Renesas Electronics Corporation 1 Toshiba America Electronic Components 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

150.0 °C 3

3 hits Apply

-65.0 °C 1

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

FLANGE MOUNT 2

3 hits Apply

Active 1 Obsolete 1 Transferred 1

3 hits Apply

2 kA 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

450 mW 1 75 W 2

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply