Parametric results for: 2SJ361 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

15 hits Apply

Configuration (2)

SINGLE 11 SINGLE WITH BUILT-IN DIODE AND RESISTOR 2

15 hits Apply

DS Breakdown Voltage-Min (1)

20 V 13

15 hits Apply

Drain Current-Max (ID) (1)

2 A 13

15 hits Apply

Drain-source On Resistance-Max (2)

400 mΩ 4 1.5 Ω 11

Min (Ω) - Max (Ω)

15 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

15 hits Apply

R-PSSO-F3 15

15 hits Apply

e0 1 e6 1

15 hits Apply

Manufacturer (2)

Hitachi Ltd 7 Renesas Electronics Corporation 8

15 hits Apply

1 1

15 hits Apply

Number of Elements (1)

1 13

15 hits Apply

Number of Terminals (1)

3 15

15 hits Apply

ENHANCEMENT MODE 13

15 hits Apply

150.0 °C 2

15 hits Apply

PLASTIC/EPOXY 15

15 hits Apply

RECTANGULAR 15

15 hits Apply

SMALL OUTLINE 15

15 hits Apply

Active 1 Contact Manufacturer 1 Obsolete 1 Transferred 12

15 hits Apply

No 1 Yes 1

15 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 13

15 hits Apply

1 W 2

15 hits Apply

Surface Mount (1)

YES 15

15 hits Apply