Parametric results for: 2SJ511 under Small Signal Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

55.0 mJ 1

4 hits Apply

DRAIN 1

4 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 1

4 hits Apply

Drain Current-Max (ID) (1)

2 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

760 mΩ 1

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

30 pF 1

4 hits Apply

R-PSSO-F3 1

4 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 4

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 1

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

SMALL OUTLINE 1

4 hits Apply

Active 1 End Of Life 1 Obsolete 2

4 hits Apply

No 1

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

4 hits Apply

500 mW 1

4 hits Apply

1.5 W 3

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply