Parametric results for: 2SK1812 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

300 V 4

4 hits Apply

Drain Current-Max (ID) (1)

30 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

230 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSFM-T3 4

4 hits Apply

e0 1

4 hits Apply

Manufacturer (1)

Shindengen Electronic Manufacturing Co Ltd 4

4 hits Apply

2 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 1

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Obsolete 4

4 hits Apply

240 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

120 W 1

4 hits Apply

120 W 1

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply