Parametric results for: 2SK1918 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

12 hits Apply

Configuration (3)

SINGLE 4 Single 2 SINGLE WITH BUILT-IN DIODE 4

12 hits Apply

DS Breakdown Voltage-Min (1)

60 V 8

12 hits Apply

Drain Current-Max (Abs) (ID) (1)

25 A 2

12 hits Apply

Drain Current-Max (ID) (1)

25 A 8

12 hits Apply

Drain-source On Resistance-Max (1)

60 mΩ 12

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

12 hits Apply

R-PSIP-T3 4 R-PSSO-G2 8

12 hits Apply

e6 2

12 hits Apply

Manufacturer (2)

Hitachi Ltd 6 Renesas Electronics Corporation 6

12 hits Apply

1 4

12 hits Apply

Number of Elements (1)

1 8

12 hits Apply

Number of Terminals (2)

2 8 3 4

12 hits Apply

ENHANCEMENT MODE 8

12 hits Apply

150.0 °C 5

12 hits Apply

PLASTIC/EPOXY 12

12 hits Apply

RECTANGULAR 12

12 hits Apply

IN-LINE 4 SMALL OUTLINE 8

12 hits Apply

Obsolete 3 Transferred 9

12 hits Apply

NOT SPECIFIED 1

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

12 hits Apply

50 W 5

12 hits Apply

Surface Mount (2)

NO 4 YES 8

12 hits Apply