Parametric results for: 2SK1930 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 7 ISOLATED 1

9 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 5

9 hits Apply

DS Breakdown Voltage-Min (2)

60 V 1 1 kV 7

Min (V) - Max (V)

9 hits Apply

Drain Current-Max (ID) (2)

4 A 8 50 A 1

Min (A) - Max (A)

9 hits Apply

Drain-source On Resistance-Max (2)

40 mΩ 1 3.8 Ω 7

Min (Ω) - Max (Ω)

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

R-PSFM-T3 1 R-PSIP-T3 3 R-PSSO-G2 4

9 hits Apply

e0 1

9 hits Apply

Manufacturer (2)

Fuji Electric Co Ltd 1 Toshiba America Electronic Components 8

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (2)

2 4 3 4

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 2

9 hits Apply

PLASTIC/EPOXY 8

9 hits Apply

RECTANGULAR 8

9 hits Apply

FLANGE MOUNT 1 IN-LINE 3 SMALL OUTLINE 4

9 hits Apply

Obsolete 9

9 hits Apply

No 4

9 hits Apply

NOT SPECIFIED 4

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

100 W 2

9 hits Apply

80 W 2

9 hits Apply

Surface Mount (2)

NO 4 YES 5

9 hits Apply