Parametric results for: 2SK1949L-E under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

AVALANCHE RATED 1

1 hit Apply

DRAIN 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

60 V 1

1 hit Apply

Drain Current-Max (ID) (1)

5 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

200 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-PSIP-T3 1

1 hit Apply

e6 1

1 hit Apply

Manufacturer (1)

Renesas Electronics Corporation 1

1 hit Apply

1 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

PLASTIC/EPOXY 1

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RECTANGULAR 1

1 hit Apply

IN-LINE 1

1 hit Apply

Transferred 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply