Parametric results for: 2SK2011 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

ISOLATED 11

11 hits Apply

Configuration (1)

SINGLE 11

11 hits Apply

DS Breakdown Voltage-Min (1)

250 V 11

11 hits Apply

Drain Current-Max (ID) (1)

12 A 11

11 hits Apply

Drain-source On Resistance-Max (1)

350 mΩ 11

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

TO-220AB 11

11 hits Apply

R-PSFM-T3 11

11 hits Apply

Manufacturer (3)

onsemi 1 SANYO Electric Co Ltd 5 SANYO Semiconductor Co Ltd 5

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

3 11

11 hits Apply

DEPLETION MODE 11

11 hits Apply

150.0 °C 1

11 hits Apply

PLASTIC/EPOXY 11

11 hits Apply

RECTANGULAR 11

11 hits Apply

FLANGE MOUNT 11

11 hits Apply

Obsolete 5 Transferred 6

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

30 W 5

11 hits Apply

2 W 1

11 hits Apply

Surface Mount (1)

NO 11

11 hits Apply