Parametric results for: 2SK2229 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 1

2 hits Apply

129.0 mJ 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

60 V 2

2 hits Apply

Drain Current-Max (ID) (1)

5 A 2

2 hits Apply

Drain-source On Resistance-Max (2)

160 mΩ 1 300 mΩ 1

Min (Ω) - Max (Ω)

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-PSIP-T3 2

2 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

IN-LINE 2

2 hits Apply

Obsolete 2

2 hits Apply

240 1 NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

1.3 W 1

2 hits Apply

1.3 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply