Parametric results for: 2SK2362 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH VOLTAGE, AVALANCHE RATING 3

5 hits Apply

142.0 mJ 5

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

500 V 5

5 hits Apply

Drain Current-Max (ID) (1)

10 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

1 Ω 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PSFM-T3 5

5 hits Apply

e0 3 e6 1

5 hits Apply

Manufacturer (3)

NEC Electronics America Inc 1 NEC Electronics Group 2 Renesas Electronics Corporation 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 2

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

FLANGE MOUNT 5

5 hits Apply

Obsolete 4 Transferred 1

5 hits Apply

Yes 1

5 hits Apply

260 1 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

100 W 2

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply