Parametric results for: 2SK2981 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

4 hits Apply

Drain Current-Max (ID) (1)

20 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

50 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-251 2 TO-252 2

4 hits Apply

R-PSIP-T3 2 R-PSSO-G2 2

4 hits Apply

Manufacturer (2)

NEC Electronics Group 2 Renesas Electronics Corporation 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (2)

2 2 3 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

IN-LINE 2 SMALL OUTLINE 2

4 hits Apply

Obsolete 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

20 W 2

4 hits Apply

Surface Mount (2)

NO 2 YES 2

4 hits Apply