Parametric results for: 2SK3070S under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

9 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 4

9 hits Apply

DS Breakdown Voltage-Min (1)

40 V 4

9 hits Apply

Drain Current-Max (Abs) (ID) (1)

75 A 1

9 hits Apply

Drain Current-Max (ID) (1)

75 A 8

9 hits Apply

Drain-source On Resistance-Max (1)

10 mΩ 4

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

9 hits Apply

R-PSSO-G2 4

9 hits Apply

e6 2

9 hits Apply

Manufacturer (2)

Hitachi Ltd 3 Renesas Electronics Corporation 6

9 hits Apply

1 4

9 hits Apply

Number of Elements (1)

1 8

9 hits Apply

Number of Terminals (1)

2 4

9 hits Apply

ENHANCEMENT MODE 8

9 hits Apply

150.0 °C 8

9 hits Apply

PLASTIC/EPOXY 4

9 hits Apply

RECTANGULAR 4

9 hits Apply

SMALL OUTLINE 4

9 hits Apply

Active 2 Not Recommended 2 Obsolete 4 Transferred 1

9 hits Apply

Yes 4

9 hits Apply

245 3 NOT SPECIFIED 1

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

9 hits Apply

100 W 8

9 hits Apply

Surface Mount (1)

YES 8

9 hits Apply