Parametric results for: 2SK3114 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

10.7 mJ 6

8 hits Apply

ISOLATED 6

8 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

8 hits Apply

DS Breakdown Voltage-Min (1)

600 V 6

8 hits Apply

Drain Current-Max (ID) (1)

4 A 6

8 hits Apply

Drain-source On Resistance-Max (1)

2.2 Ω 6

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

8 hits Apply

TO-220AB 2

8 hits Apply

R-PSFM-T3 6

8 hits Apply

e0 2 e3 2

8 hits Apply

Manufacturer (2)

NEC Electronics Group 3 Renesas Electronics Corporation 5

8 hits Apply

Number of Elements (1)

1 6

8 hits Apply

Number of Terminals (1)

3 6

8 hits Apply

ENHANCEMENT MODE 6

8 hits Apply

150.0 °C 3

8 hits Apply

PLASTIC/EPOXY 6

8 hits Apply

RECTANGULAR 6

8 hits Apply

FLANGE MOUNT 6

8 hits Apply

Obsolete 6 Transferred 2

8 hits Apply

Yes 3

8 hits Apply

260 1 NOT SPECIFIED 2

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

8 hits Apply

2 W 2 30 W 1

Min (W) - Max (W)

8 hits Apply

Surface Mount (1)

NO 6

8 hits Apply