Parametric results for: 2SK3434-Z under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

78.0 mJ 8

11 hits Apply

DRAIN 8

11 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 8

11 hits Apply

DS Breakdown Voltage-Min (1)

60 V 8

11 hits Apply

Drain Current-Max (ID) (1)

48 A 10

11 hits Apply

Drain-source On Resistance-Max (1)

31 mΩ 8

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

11 hits Apply

TO-263AB 4

11 hits Apply

R-PSSO-G2 8

11 hits Apply

e0 4

11 hits Apply

Manufacturer (2)

NEC Electronics Group 4 Renesas Electronics Corporation 7

11 hits Apply

Number of Elements (1)

1 10

11 hits Apply

Number of Terminals (1)

2 8

11 hits Apply

ENHANCEMENT MODE 9

11 hits Apply

150.0 °C 5

11 hits Apply

PLASTIC/EPOXY 8

11 hits Apply

RECTANGULAR 8

11 hits Apply

SMALL OUTLINE 8

11 hits Apply

Obsolete 8 Transferred 3

11 hits Apply

No 1 Yes 3

11 hits Apply

260 1 NOT SPECIFIED 5

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

11 hits Apply

56 W 5

11 hits Apply

Surface Mount (1)

YES 10

11 hits Apply