Parametric results for: 2SK3512 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

188.2 mJ 2 217.0 mJ 1

Min (mJ) - Max (mJ)

3 hits Apply

DRAIN 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

500 V 3

3 hits Apply

Drain Current-Max (ID) (2)

12 A 1 14 A 2

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (1)

520 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PSIP-T3 1 R-PSSO-G2 2

3 hits Apply

Manufacturer (1)

Fuji Electric Co Ltd 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (2)

2 2 3 1

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

IN-LINE 1 SMALL OUTLINE 2

3 hits Apply

Active 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

95 W 1 195 W 2

Min (W) - Max (W)

3 hits Apply

Surface Mount (2)

NO 1 YES 2

3 hits Apply