Parametric results for: 2SK36 under Small Signal Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 6 LOW NOISE 7

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8.0 mJ 1 20.0 mJ 1 122.0 mJ 4 125.5 mJ 4 129.1 mJ 5 130.8 mJ 1 130.9 mJ 2 155.8 mJ 1 169.0 mJ 4 171.1 mJ 2 175.0 mJ 2 182.0 mJ 1 189.0 mJ 4 202.0 mJ 2 204.0 mJ 1 204.7 mJ 3 221.9 mJ 5 227.0 mJ 3 242.0 mJ 1 242.2 mJ 1 242.7 mJ 7 244.0 mJ 3 245.3 mJ 6 261.1 mJ 2 269.5 mJ 4 276.7 mJ 1 278.0 mJ 3 280.0 mJ 1 287.7 mJ 2 372.0 mJ 1 420.0 mJ 2 488.0 mJ 2 570.0 mJ 1 802.7 mJ 1 828.0 mJ 1 1800.0 mJ 1 2000.0 mJ 1 2200.0 mJ 1

Min (mJ) - Max (mJ)

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DRAIN 71 GATE 31 ISOLATED 24 SOURCE 1

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Configuration (4)

SINGLE 146 Single 6 SINGLE WITH BUILT-IN DIODE 176 SINGLE WITH BUILT-IN DIODE AND RESISTOR 13

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DS Breakdown Voltage-Min (16)

7.5 V 1 20 V 28 30 V 7 60 V 8 100 V 19 150 V 12 200 V 32 230 V 2 250 V 7 400 V 1 450 V 5 500 V 9 600 V 12 700 V 2 800 V 3 900 V 11

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (1)

30 mA 6

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Drain Current-Max (ID) (39)

10 mA 52 30 mA 47 500 mA 17 670 mA 1 2 A 1 2.7 A 1 3 A 1 3.7 A 2 4 A 3 4.4 A 1 4.5 A 2 6 A 26 7 A 7 7.5 A 1 8 A 21 9 A 2 10 A 7 12 A 9 13 A 4 14 A 5 16 A 10 17 A 5 18 A 3 19 A 13 20 A 4 23 A 3 25 A 4 30 A 4 31 A 1 33 A 4 35 A 1 36 A 3 41 A 3 42 A 1 43 A 1 50 A 2 52 A 1 64 A 18 65 A 4

Min (A) - Max (A)

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Drain-source On Resistance-Max (41)

8.5 mΩ 3 9 mΩ 2 9.5 mΩ 1 9.9 mΩ 4 14 mΩ 2 19 mΩ 1 40 mΩ 4 44 mΩ 6 60 mΩ 4 62 mΩ 4 68 mΩ 1 70 mΩ 5 82 mΩ 2 85 mΩ 1 100 mΩ 2 105 mΩ 6 110 mΩ 1 125 mΩ 1 160 mΩ 1 170 mΩ 7 180 mΩ 4 215 mΩ 2 260 mΩ 6 315 mΩ 4 380 mΩ 11 430 mΩ 5 440 mΩ 1 480 mΩ 5 550 mΩ 3 570 mΩ 7 600 mΩ 21 930 mΩ 1 1 Ω 1 1.18 Ω 1 1.58 Ω 2 1.7 Ω 2 2 Ω 5 2.3 Ω 2 2.5 Ω 3 4 Ω 1 4.3 Ω 2

Min (Ω) - Max (Ω)

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JUNCTION 123 METAL-OXIDE SEMICONDUCTOR 243

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Highest Frequency Band (2)

ULTRA HIGH FREQUENCY BAND 1 VERY HIGH FREQUENCY BAND 41

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TO-18 1 TO-220AB 38 TO-236 12 TO-247 6 TO-247AD 1 TO-251 8 TO-251AA 3 TO-252 7 TO-252AA 1 TO-252AB 12 TO-263AB 1 TO-92 17

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O-MBCY-W3 1 O-PBCY-T3 16 O-PBCY-W3 1 R-PDSO-F3 12 R-PDSO-G3 115 R-PSFM-T3 50 R-PSIP-T3 39 R-PSSO-F3 4 R-PSSO-G2 51 S-XBCC-N4 5

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e0 72 e6 26

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Manufacturer (12)

Fuji Electric Co Ltd 73 Hitachi Ltd 25 InterFET Corporation 1 NEC Electronics America Inc 37 NEC Electronics Group 29 onsemi 13 Panasonic Electronic Components 5 Renesas Electronics Corporation 124 SANYO Electric Co Ltd 17 SANYO Semiconductor Co Ltd 14 Toshiba America Electronic Components 58 Unisonic Technologies Co Ltd 7

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1 6

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Number of Elements (1)

1 335

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Number of Terminals (3)

2 51 3 238 4 5

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DEPLETION MODE 105 ENHANCEMENT MODE 216

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125.0 °C 71 150.0 °C 122

Min (°C) - Max (°C)

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METAL 1 PLASTIC/EPOXY 288 UNSPECIFIED 5

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RECTANGULAR 271 ROUND 18 SQUARE 5

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CHIP CARRIER 5 CYLINDRICAL 18 FLANGE MOUNT 50 IN-LINE 39 SMALL OUTLINE 182

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Active 51 Contact Manufacturer 1 End Of Life 8 Not Recommended 18 Obsolete 238 Transferred 87

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No 11 Yes 25

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260 27 NOT SPECIFIED 39

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Polarity/Channel Type (1)

N-CHANNEL 372

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80 mW 19 100 mW 9 150 mW 18 200 mW 28 300 mW 4 400 mW 12 900 mW 1 1.5 W 1 3.5 W 2 15 W 4 20 W 24 24 W 6 25 W 2 29 W 1 35 W 1 36 W 3 40 W 11 45 W 1 50 W 14 97 W 1 100 W 1 105 W 2 150 W 3 195 W 2 225 W 1 235 W 2 270 W 5 600 W 1

Min (W) - Max (W)

403 hits Apply

Surface Mount (2)

NO 114 YES 258

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