Parametric results for: 2SK439 under RF Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 35 Single 3

38 hits Apply

DS Breakdown Voltage-Min (1)

20 V 6

38 hits Apply

Drain Current-Max (Abs) (ID) (1)

30 mA 3

38 hits Apply

Drain Current-Max (ID) (1)

30 mA 35

38 hits Apply

METAL-OXIDE SEMICONDUCTOR 32

38 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 31

38 hits Apply

R-PSIP-T3 22 R-PSIP-W3 12

38 hits Apply

Manufacturer (2)

Hitachi Ltd 19 Renesas Electronics Corporation 19

38 hits Apply

Number of Elements (1)

1 35

38 hits Apply

Number of Terminals (1)

3 34

38 hits Apply

DEPLETION MODE 7 ENHANCEMENT MODE 22

38 hits Apply

150.0 °C 11

38 hits Apply

PLASTIC/EPOXY 34

38 hits Apply

RECTANGULAR 34

38 hits Apply

IN-LINE 34

38 hits Apply

Contact Manufacturer 3 Obsolete 4 Transferred 31

38 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 38

38 hits Apply

300 mW 11

38 hits Apply

Surface Mount (1)

NO 38

38 hits Apply