Parametric results for: 2SK544D under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW NOISE 5

5 hits Apply

Configuration (1)

SINGLE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

20 V 2

5 hits Apply

Drain Current-Max (Abs) (ID) (1)

30 mA 1

5 hits Apply

Drain Current-Max (ID) (1)

30 mA 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 5

5 hits Apply

R-PSIP-T3 5

5 hits Apply

Manufacturer (3)

onsemi 1 SANYO Electric Co Ltd 2 SANYO Semiconductor Co Ltd 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

DEPLETION MODE 5

5 hits Apply

125.0 °C 2

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

IN-LINE 5

5 hits Apply

Obsolete 2 Transferred 3

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

300 mW 2

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply