Parametric results for: 2SK906 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

100 V 1

2 hits Apply

Drain Current-Max (ID) (2)

30 A 1 32 A 1

Min (A) - Max (A)

2 hits Apply

Drain-source On Resistance-Max (1)

60 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-PSFM-T3 1

2 hits Apply

e0 1

2 hits Apply

Manufacturer (1)

Fuji Electric Co Ltd 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

125 W 1

2 hits Apply

125 W 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply