Parametric results for: 2n2226 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 1

13 hits Apply

Collector Current-Max (IC) (2)

800 mA 4 10 A 5

Min (A) - Max (A)

13 hits Apply

Collector-Emitter Voltage-Max (2)

40 V 8 50 V 1

Min (V) - Max (V)

13 hits Apply

Configuration (2)

DARLINGTON 1 SINGLE 12

13 hits Apply

DC Current Gain-Min (hFE) (2)

100.0 4 250.0 1

Min - Max

13 hits Apply

O-MBPM-D2 1

13 hits Apply

Manufacturer (6)

New Jersey Semiconductor Products Inc 8 Powerex Power Semiconductors 1 Semitronics Corp 1 Silicon Transistor Corporation 1 Solid Power Corp 1 Spectrum Control 1

13 hits Apply

Number of Elements (1)

1 13

13 hits Apply

Number of Terminals (1)

2 1

13 hits Apply

150.0 °C 5

13 hits Apply

METAL 1

13 hits Apply

ROUND 1

13 hits Apply

POST/STUD MOUNT 1

13 hits Apply

Active 8 Contact Manufacturer 2 Obsolete 2 Transferred 1

13 hits Apply

Polarity/Channel Type (1)

NPN 13

13 hits Apply

150 W 1

13 hits Apply

150 W 5

13 hits Apply

Surface Mount (1)

NO 5

13 hits Apply

Transition Frequency-Nom (fT) (3)

7 kHz 5 250 MHz 4 300 MHz 4

Min (MHz) - Max (MHz)

13 hits Apply