Parametric results for: 2n4957e3 under RF Small Signal Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

ISOLATED 2

2 hits Apply

Collector Current-Max (IC) (1)

30 mA 2

2 hits Apply

0.8 pF 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

30 V 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

10.0 2

2 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

2 hits Apply

TO-72 2

2 hits Apply

O-MBCY-W4 2

2 hits Apply

e4 2

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Microsemi Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

4 2

2 hits Apply

200.0 °C 2

2 hits Apply

-65.0 °C 2

2 hits Apply

METAL 2

2 hits Apply

ROUND 2

2 hits Apply

CYLINDRICAL 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

PNP 2

2 hits Apply

200 mW 1

2 hits Apply

200 mW 2

2 hits Apply

Power Gain-Min (Gp) (1)

17.0 dB 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply