Parametric results for: 2n6650 under Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

HIGH RELIABILITY 1

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COLLECTOR 31

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Collector Current-Max (IC) (1)

10 A 44

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300 pF 1

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Collector-Emitter Voltage-Max (1)

80 V 36

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Configuration (3)

DARLINGTON 16 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 7 SINGLE 21

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DC Current Gain-Min (hFE) (2)

100.0 35 1000.0 9

Min - Max

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TO-204AA 10 TO-3 24 TO-66 1

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O-MBFM-P2 35

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e0 22 e3 2

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Manufacturer (21)

Advanced Semiconductor Inc 1 Central Semiconductor Corp 3 Defense Logistics Agency 3 Digitron Semiconductors 1 Freescale Semiconductor 1 General Electric Solid State 1 General Transistor Corp 1 Harris Semiconductor 3 Intersil Corporation 3 Lambda Semiconductors 1 Microchip Technology Inc 4 Microsemi Corporation 5 Mospec Semiconductor Corp 1 Motorola Mobility LLC 3 Motorola Semiconductor Products 4 New England Semiconductor 4 New Jersey Semiconductor Products Inc 1 Semtech Corporation 1 Taitron Components Inc 1 Thomson Consumer Electronics 1 VPT Components 4

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Number of Elements (1)

1 36

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Number of Terminals (1)

2 35

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150.0 °C 14 175.0 °C 9 200.0 °C 1

Min (°C) - Max (°C)

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-65.0 °C 4

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METAL 35

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ROUND 35

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FLANGE MOUNT 35

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Active 15 Contact Manufacturer 2 Obsolete 20 Transferred 10

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No 4 Yes 1

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NOT SPECIFIED 4

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Polarity/Channel Type (2)

NPN 20 PNP 24

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5 W 1 70 W 2

Min (W) - Max (W)

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85 W 1 100 W 15

Min (W) - Max (W)

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Surface Mount (1)

NO 43

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Transition Frequency-Nom (fT) (2)

6 MHz 1 20 MHz 15

Min (MHz) - Max (MHz)

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