Parametric results for: 2n7002a under Small Signal Field-Effect Transistors
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2N7002A
Yangzhou Yangjie Electronics Co Ltd
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$0.0147 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 340 mA | 2.5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | YANGZHOU YANGJIE ELECTRONICS CO LTD | compliant | EAR99 | ||||||||||||||||||
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2N7002A
Diotec Semiconductor AG
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$0.0217 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 280 mA | 2 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | 3 | 150 °C | 260 | 10 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIOTEC SEMICONDUCTOR AG | not_compliant | EAR99 | 2019-07-12 | Diotec | |||||||||||
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2N7002A-7
Diodes Incorporated
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$0.0385 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 6 Ω | HIGH RELIABILITY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | compliant | EAR99 | GREEN, PLASTIC PACKAGE-3 | 3 | ||||||||||
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T2N7002AK,LM
Toshiba America Electronic Components
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$0.0719 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 60 V | 1 | 200 mA | 4.7 Ω | 0.7 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | R-PDSO-G3 | 1 | 150 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | compliant | Toshiba | SOT-23, 3 PIN | |||||||||||||||
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2N7002AQ-7
Diodes Incorporated
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$0.0847 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 180 mA | 6 Ω | 1.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 540 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | DIODES INC | compliant | EAR99 | SOT-23, 3 PIN | |||||||||||
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2N7002AQ-13
Diodes Incorporated
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$0.0916 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 180 mA | 6 Ω | 1.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 540 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | DIODES INC | compliant | EAR99 | SMALL OUTLINE, R-PDSO-G3 | |||||||||||
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2N7002AX-13
Diodes Incorporated
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Check for Price | Yes | Not Recommended | e3 | 1 | 260 | 30 | Matte Tin (Sn) | DIODES INC | compliant | EAR99 | 2016-03-31 | , | |||||||||||||||||||||||||||||||||
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2N7002-AU_R2_000A1
PanJit Semiconductor
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 3 Ω | ULTRA LOW RESISTANCE | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | 350 mW | SWITCHING | SILICON | R-PDSO-G3 | AEC-Q101; TS 16949 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | PAN JIT INTERNATIONAL INC | compliant | EAR99 | 8541.21.00.95 | ||||||||||||
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T2N7002AK,LM(B
Toshiba America Electronic Components
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 60 V | 1 | 200 mA | 4.7 Ω | 0.7 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | R-PDSO-G3 | 1 | 150 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | compliant | SOT-23, 3 PIN | |||||||||||||||||
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2N7002A
Micro Commercial Components
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Check for Price | Active | 60 V | 115 mA | 4 Ω | MICRO COMMERCIAL COMPONENTS CORP | unknown |